BC847ASOT-23 BIPOLAR TRANSISTORSTRANSISTOR(NPN)FEATURES*Power dissipation PCM :0.225W (Tamb=25OC) Note1*Collector current ICM :0.1A*Collector-base voltage VCBO :50V
Operating and storage junction temperature range*
TJ,Tstg: -55OC to +150OC
SOT-23COLLECTOR3MECHANICAL DATA
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BASECase: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteedMounting position: AnyWeight: 0.008 gram
120.055(1.40)0.047(1.20) EMITTER0.006(0.15)0.003(0.08)0.020(0.50)0.012(0.30)0.043(1.10)0.035(0.90)0.004(0.10)0.000(0.00)0.020(0.50)0.012(0.30)0.100(2.55)0.0(2.25)MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
O
0.019(2.00)0.071(1.80)1320.118(3.00)0.110(2.80)Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 10mA, IE=0)Collector-emitter breakdown voltage (IC= 10mA, IB=0)Emitter-base breakdown voltage (IE= 10mA, IC=0)Collector cut-off current (VCB= 50V, IE=0)Collector cut-off current (VCE= 45V, IB=0)Emitter cut-off current (VEB= 5V, IC=0)DC current gain (VCE= 5V, IC= 2mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 5mA)Base-emitter saturation voltage (IC= 100mA, IB= 5mA)Transition frequency (VCE= 5V, IC= 10mA, f= 100MHZ)DEVICE MARKING
BC847A
Notes: 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.1E
2007-3SYMBOLVCBOVCEOVEBOICBOICEOIEBOhFE(1)VCE(sat)VBE(sat)
MIN50456---110--100MAX---0.10.10.12200.51.1-UNITSVVVmAmAmA-VVMHZfT
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