AO442730V P-Channel MOSFETGeneral DescriptionThe AO4427 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gatecharge with a 25V gate rating. This device is suitablefor use as a load switch or in PWM applications. Thedevice is ESD protected.Product SummaryVDS (V) = -30VID = -12.5 A (VGS = -20V)RDS(ON) < 12mΩ (VGS = -20V)RDS(ON) < 14mΩ (VGS = -10V)ESD Rating: 2KV HBM 100% UIS Tested100% Rg TestedSOIC-8Top View Bottom ViewDDDDDGGSSSSAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageGate-Source VoltageContinuous DrainCurrent AFPulsed Drain Current BTA=25°CPower Dissipation ATA=70°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient AFMaximum Junction-to-Ambient AMaximum Junction-to-Lead CTA=25°CTA=70°CIDIDMPDTJ, TSTGVGSMaximum-30±25-12.5-10.5-6032.1-55 to 150UnitsVVAW°CSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp285421Max407530Units°C/W°C/W°C/WAlpha & Omega Semiconductor, Ltd.www.aosmd.comAO4427Electrical Characteristics (TJ=25°C unless otherwise noted)SymbolParameterConditionsID=-250µA, VGS=0VVDS=-30V, VGS=0VCTJ=55°VDS=0V, VGS=±25VVDS=VGS ID=-250µAVGS=-10V, VDS=-5VVGS=-20V, ID=-12.5ARDS(ON)Static Drain-Source On-ResistanceTJ=125°CVGS=-10V, ID=-10AVGS=-4.5V, ID=-5AgFSVSDISForward TransconductanceDiode Forward VoltageVDS=-5V, ID=-12.5AIS=-1A,VGS=0V-1.7-609.412.211.53224-1-4.22330VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz3.44803206.841101212.8VGS=-10V, VDS=-15V, RL=1.2Ω,RGEN=3ΩIF=-12.5A, dI/dt=100A/µs10.349.52928203544810522900121514-2.5Min-30-1-5±10-3TypMaxUnitsVµAµAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnCSTATIC PARAMETERSDrain-Source Breakdown VoltageBVDSSIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERSInput CapacitanceCissCossCrssRgOutput CapacitanceReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQgTotal Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrrGate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeVGS=-10V, VDS=-15V,ID=-12.5ABody Diode Reverse Recovery ChargeIF=-12.5A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25°C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. TheSOA curve provides a single pulse rating.F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.Rev8: Nov. 2010THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Alpha & Omega Semiconductor, Ltd.www.aosmd.comAO4427TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30-10V-6V-5V20)A-4.5V( DI-10VGS=-4V0012-V345DS (Volts)Figure 1: On-Region Characteristics1211VGS=-10V)ΩmV(GS=-10V, VDS=-15V, I )N10(OSDR9VGS=-20V80510152025-ID (A)Figure 3: On-Resistance vs. Drain Current andGate Voltage50ID=-12.5A40)THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Ωm30COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING( )N125°COUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,(OSD20FUNCTIONS AND RELIABILITY WITHOUT NOTICE.R1025°C0456710-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.25VDS=-5V2015)A(D125°CI-10525°C011.522.5-V33.544.55GS(Volts)Figure 2: Transfer Characteristics1.6ecnaGS=-10Vt1.4VsiIsD=-10AeR-D=-12.5AnO1.2 dezVGS=-20VilaImD=-12.5Ar1oN0.80255075100125150175Temperature (°C)Figure 4: On-Resistance vs. JunctionTemperature1.0E+011.0E+001.0E-01125°C)A1.0E-02( SI-1.0E-031.0E-0425°C1.0E-051.0E-060.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode Characteristicswww.aosmd.comAO4427TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10VDS=-15VID=-12.5A8Capacitance (pF)-VGS (Volts)3000250020001500Coss10005000052025303540-Qg (nC)Figure 7: Gate-Charge Characteristics1015450152025-VDS (Volts)Figure 8: Capacitance Characteristics51030CrssCiss20100.0RDS(ON)limited10.0-ID (Amps)100µs1msPower (W)10µs40TJ(Max)=150°CTA=25°C30V10msGS=-10V, VDS=-15V, ID=-12.5A0.1s201.0TJ(Max)=150°CTA=25°C0.10.11s10sDC1101001000.001-VDS (Volts)Figure 9: Maximum Forward Biased SafeOperating Area (Note E)0.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)0.0110ZθJA Normalized TransientThermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=40°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse1THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,PDFUNCTIONS AND RELIABILITY WITHOUT NOTICE.0.1TonSingle Pulse0.010.000010.00010.1110Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance0.0010.011001000TAlpha & Omega Semiconductor, Ltd.www.aosmd.com
