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专利名称：Circuit for generating internal voltage发明人：Hyun-Sun Mo,Sang-Ki Hwang申请号：US10881937申请日：20040630
公开号：US20050017704A1公开日：20050127
专利附图：
摘要：There is provided an internal voltage generating circuit that reliably supplies aconstant internal voltage to the interior of a semiconductor device without regard to anexternal voltage, where the internal voltage generating circuit compares a first referencevoltage with a first internal voltage fed back to generate the first internal voltage
following the first reference voltage, receives the first internal voltage to generate asecond reference voltage which is more insensitive to fluctuation of the external voltagethan the first reference voltage, and compares the second reference voltage with asecond internal voltage fed back to generate the second internal voltage which followsthe second reference voltage and has a variation gradient smaller than that of the firstinternal voltage when the external voltage is changed, thereby supplying the secondinternal voltage to a circuit requiring stabilized internal voltage, which is obtained toincrease stability and durability of the operation of the semiconductor device.
申请人：Hyun-Sun Mo,Sang-Ki Hwang
地址：Seoul KR,Sungnam-si KR
国籍：KR,KR
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